IEC 63068-4:2022 PDF Download
Standard EN Sample
Semiconductor devices - Non-destructive recognition criteria of defects in silicon carbide homoepitaxial wafer for power devices - Part 4: Procedure for identifying and evaluating defects using a combined method of optical inspection and photoluminescence
Also Known As:
SKU114442837
Published by
International Electrotechnical Commission
IEC
Publication Date2022-07-27
Pages CountPages30
IEC 63068-4:2022(E) provides a procedure for identifying and evaluating defects in as-grown 4H-SiC (Silicon Carbide) homoepitaxial wafer by systematically combining two test methods of optical inspection and photoluminescence (PL). Additionally, this document exemplifies optical inspection and PL images to enable the detection and categorization of defects in SiC homoepitaxial wafers.
Details
| Edition | 1.0 |
| ICS Codes | 31.080.99 - Other semiconductor devices |
| Language(s) | English |
| File Size | 7.9 MB |
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